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Parallel BUS FeRAM

  Data
sheets
Memory
Density

(bit)

Configuration

(word×bit)

Supply
Voltage
(V)
Operating
Speed
Read/Write
Endurance
Data
Retention

(years)

Operating
Temperature

Ta(°C)

PKG Halogen
free
Support*1
Automotive
Grade*2
Sample
and
Buy
  • *1 : A check mark of halogen free support means that we will be able to ship out the halogen free products. For details, please inquire to the sales.
  • *2 :  Please inquire to the sales for AEC-Q100.

I2C BUS FeRAM

  Data
sheets
Memory
Density

(bit)

Configuration

(word×bit)

Supply
Voltage
(V)
Operating
Speed
Read/Write
Endurance
Data
Retention

(years)

Operating
Temperature

Ta(°C)

PKG Halogen
free
Support*1
Automotive
Grade*2
Sample
and
Buy
  • *1 : A check mark of halogen free support means that we will be able to ship out the halogen free products. For details, please inquire to the sales.
  • *2 :  Please inquire to the sales for AEC-Q100.

SPI BUS FeRAM

  Data
sheets
Memory
Density

(bit)

Configuration

(word×bit)

Supply
Voltage
(V)
Operating
Speed
Read/Write
Endurance
Data
Retention

(years)

Operating
Temperature

Ta(°C)

PKG Halogen
free
Support*1
Automotive
Grade*2
Sample
and
Buy
  • *1 : A check mark of halogen free support means that we will be able to ship out the halogen free products. For details, please inquire to the sales.
  • *2 :  Please inquire to the sales for AEC-Q100.

Overview

Born in collaboration with Lapis Technology's memory design technology and ROHM's many years of manufacturing technology!

FeRAM is Ferro-electric Random Access Memory from 32Kbit to 256Kbit configuration developed by ferroelectrics process and CMOS process technology.
No backup by battery, high speed random read/write, rewrite up to 10 trillion times and low power consumption are offered for various applications.
LAPIS Technology's FeRAM ensures high quality and uninterrupted supply within ROHM group.

Features

Features1An overwhelming rewrite endurance 10 Million-fold endurance compared with Flash memory

FeRAM(10 trillion times) achieved 10 million times of rewrite endurance more than Flash memory(100K to 1 million times).
The writing address management by the microcontroller is unnecessary because FeRAM can rewrite successive data.

Features2High speed rewrite 100,000-fold high speed compared with Flash memory

FeRAM achieved high-speed rewrite performance compared to conventional Flash memory.
FeRAM provides 100,000 times faster rewrite speed (150ns) at rewriting 1 byte data compared with conventional Flash memory (700ms) because it does not need erase procedure and writing procedure.

Features3Low power consumption 1/100 or less power consumption of Flash memory

FeRAM achieved low power consumption because it does not need erase procedure and writing procedure.
FeRAM is 100 times less power consumption during rewrite (0.2mW) compared with conventional Flash memory (35mW).
FeRAM is ideal for data backup during power outages and frequent data logging.

Features4High reliability with ECC function

Built-in ECC (Error Check and Correction) function for all FeRAM products.
A memory is equipped with a data area and a correction signum data area.
The data used as a pair and correction signum data are read, and even if a bit error occurs, the corrected data will be outputted by ECC circuit.

Features 5Superior electrical conductivity Cu(Copper) frame

A lineup of products with a Cu frame is utilized for high connection reliability.

Applications

LAPIS Technology FeRAM is used in a variety of applications.

Lapis Technology FeRAM application

LSI Documents Download

 

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Cross reference search for Ferro-electric Random Access Memory offers LAPIS Technology's equivalent products from the other manufacturer's Mask ROM part number.

The manufacture for the cross reference search is Cypress Fujitsu .

Enter part number by five or more characters. (Partial search is also available.)

Ferroelectric Memory Cross referenceSearch result

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 Note:

Cross-Reference information presented by LAPIS Technology is based on our best comparative review of other manufacturers' published information at the time the information is collected.

We recommend, and it is the responsibility of our customers, to conduct thorough review of our latest datasheet and product specifications and to confirm the device functionality for your specific application.

LAPIS Technology is not responsible for any incorrect or incomplete information and may alter the information at any time without notification or notice.