Overview

Date : 2016/4/27

DRAM

MSM56V16161NP

The MSM56V16161N is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in silicon-gate CMOS technology.
The device operates at 3.3V. The inputs and outputs are LVTTL compatible.

  • Specification

  • Documents

  • Tool/Software

Specification
Density(bit) 16M
Data Rate Type SDR
Supply Voltage(v) 3.3±0.3
Number of Data bits 16
Configuration(bank×word×bit) 2
×
512K
×
16
Max Operating Frequency(MHz) 143
Refresh Cycle(cycle/ms) 4096
64
Cycke Time(ns) 7/7.5/10
Features DrivabilityControl
Operating Temperature(°C) −40 ~+85
Package TSOP(2)50-400-0.80
Automotive -
Halogen free support Yes
MSM56V16161NP datasheet
Contents Version Date Download
MSM56V16161NP datasheet 1 2017/08/31
Implementation specifications
Package code Contents Download
P-TSOP(2)50-400-0.80-ZK Outline and Dimension, Recommended Reflow Conditions, Shipment Package Specification, Mounting area for package lead soldering to PC boards, Marking Layout
Environmental data
Package code Contents Download
P-TSOP(2)50-400-0.80-ZK RoHS Certificate of Compliance, Reach Certificate of Compliance, List of ingredient substances, SOC Analysis Report
No Entry
Contents Version Date Download
- - - -